What effect does the movement of majority carriers have during reverse bias?

During reverse bias, the majority carriers (which are electrons in n-type material and holes in p-type material) are pulled away from the junction due to the external voltage applied in reverse direction. This movement leads to an increase in the barrier voltage.

In a reverse-biased diode, the applied voltage increases the electric field across the depletion region, which widens the depletion zone and enhances the potential barrier that carriers must overcome to conduct current. As a result, more electrons (in n-type) and holes (in p-type) are drawn away from the junction, contributing to a higher barrier voltage. This increase prevents the flow of current as majority carriers are not able to recombine at the junction, reinforcing the blocking behavior of the diode under reverse bias.

The impact of reverse bias leads to minimal current flow, mainly due to minority carriers, but the significant point is that the barrier voltage increases due to the movement of the majority carriers away from the depletion region, affirming the validity of the chosen answer.